Infineon IPD60R950C6ATMA1 CoolMOS™ Power Transistor: Technical Specifications and Application Benefits

The Infineon IPD60R950C6ATMA1 is a state-of-the-art power MOSFET belonging to the revolutionary CoolMOS™ C6 superjunction (SJ) technology family. Engineered for high efficiency and power density, this component is a cornerstone for modern power supply designs, particularly in applications demanding superior switching performance and thermal management.

Technical Specifications

This N-channel MOSFET is characterized by its impressive key parameters:

Voltage and Current Ratings: It boasts a drain-source voltage (V_DS) of 650 V and a continuous drain current (I_D) of 7.5 A at 25°C, making it robust for a wide range of off-line applications.

Ultra-Low On-Resistance: A standout feature is its exceptionally low typical on-resistance (R_DS(on)) of 950 mΩ at a gate-source voltage of 10 V. This is a primary factor in minimizing conduction losses.

Superior Switching Performance: The device features very low gate charge (Q_G) and low effective output capacitance (C_OSS(eff)). These characteristics are critical for achieving high switching frequencies with minimal switching losses.

Enhanced Body Diode: The integrated body diode offers excellent reverse recovery characteristics (Q_rr, I_RM), which is vital for performance in hard-switching and resonant topologies.

Package: Housed in a TO-252 (DPAK) package, it provides a good balance between compact size and thermal performance, facilitating efficient PCB layout and heat dissipation.

Application Benefits

The integration of CoolMOS™ C6 technology translates into significant advantages for end applications:

Maximized Energy Efficiency: The combination of low R_DS(on) and minimal switching losses directly reduces power dissipation across the entire load range. This leads to higher overall system efficiency, helping designers meet stringent energy standards like 80 PLUS.

Increased Power Density: By enabling operation at higher switching frequencies, the IPD60R950C6ATMA1 allows for the use of smaller passive components (transformers, inductors, and capacitors). This results in more compact, lighter, and potentially lower-cost power supplies.

Improved Thermal Management: Reduced power losses mean less heat is generated within the system. This alleviates thermal stress, improves long-term reliability, and can simplify heatsinking requirements.

Robustness and Reliability: The technology offers a high level of durability and is designed to handle voltage spikes and stressful operating conditions commonly found in switch-mode power supplies (SMPS).

This transistor is ideally suited for a diverse set of applications, including:

Switch-Mode Power Supplies (SMPS): Particularly in power factor correction (PFC) stages and DC-DC converter sections.

Lighting: High-performance LED driver circuits for commercial and industrial lighting.

Consumer and Industrial Electronics: Auxiliary power supplies for appliances, motor controls, and battery chargers.

ICGOODFIND Summary

The Infineon IPD60R950C6ATMA1 CoolMOS™ C6 transistor is a high-efficiency powerhouse that enables designers to achieve new levels of performance. Its optimal blend of ultra-low conduction losses, fast switching capability, and thermal efficiency makes it an exceptional choice for modern, compact, and energy-conscious power conversion systems.

Keywords: CoolMOS™ C6, High Efficiency, Low R_DS(on), High Switching Frequency, Power Density