onsemi FDS4897AC Dual N-Channel PowerTrench MOSFET: Datasheet, Application Circuit, and Pinout Configuration
The onsemi FDS4897AC is a dual N-channel MOSFET that leverages advanced PowerTrench® technology to deliver superior performance in power management applications. This device integrates two independent enhancement-mode field-effect transistors in a single package, offering designers a compact and efficient solution for a wide range of switching tasks. Its primary strengths lie in its low on-state resistance (RDS(on)) and high current handling capability, which are critical for minimizing conduction losses and improving overall system efficiency.
A deep dive into the FDS4897AC datasheet reveals its key electrical characteristics. Each MOSFET can support a drain-source voltage (VDS) of 30V and a continuous drain current (ID) of 7.5A per channel. The standout feature is its exceptionally low RDS(on), typically 13.5mΩ at VGS = 10V, which ensures minimal voltage drop and power dissipation when the switch is fully turned on. The device is also characterized by its fast switching speeds, making it highly suitable for high-frequency applications such as switch-mode power supplies (SMPS), DC-DC converters, and motor control circuits.
The pinout configuration of the FDS4897AC is provided in an 8-pin SOIC package. The standard pinout is as follows:
Pin 1: Source 1 (S1)
Pin 2: Gate 1 (G1)
Pin 3: Source 1 (S1)

Pin 4: Drain 2 (D2)
Pin 5: Drain 2 (D2)
Pin 6: Source 2 (S2)
Pin 7: Gate 2 (G2)
Pin 8: Source 2 (S2)
This configuration features common-drain connections, and the duplicated pins are designed to enhance current carrying capacity and provide a lower thermal resistance path to the printed circuit board (PCB).
A typical application circuit for the FDS4897AC is a synchronous buck converter. In this setup, one MOSFET is used as the control (high-side) switch and the other as the synchronous (low-side) rectifier. The driver circuit must supply adequate gate drive voltage, typically between 4.5V and 10V, to ensure the MOSFETs are fully enhanced. It is crucial to include a gate resistor to control the rise and fall times, thereby mitigating electromagnetic interference (EMI) and preventing potentially damaging voltage spikes. Proper decoupling capacitors near the drain and source pins are also essential for stable operation.
ICGOODFIND: The onsemi FDS4897AC stands out as an excellent choice for designers seeking a high-efficiency, compact dual MOSFET solution. Its low RDS(on) and robust PowerTrench® technology make it particularly effective in power conversion applications where thermal performance and energy efficiency are paramount. Careful attention to the PCB layout, including the use of a sufficient copper area for heat sinking, is recommended to maximize the device's performance.
Keywords: PowerTrench MOSFET, Low RDS(on), Synchronous Buck Converter, Dual N-Channel, Switch-Mode Power Supply
