Infineon IPP055N08NF2S: A High-Performance OptiMOS 5 Power MOSFET for Efficient Power Conversion

The relentless pursuit of higher efficiency and power density in modern electronics places immense demands on power switching components. Addressing this challenge, Infineon Technologies has developed the IPP055N08NF2S, a standout member of its advanced OptiMOS™ 5 power MOSFET family. This device is engineered to set a new benchmark for performance in a wide array of power conversion applications, from server and telecom supplies to industrial motor drives and solar inverters.

Built on an advanced silicon process, this N-channel MOSFET is characterized by its exceptionally low figure-of-merit (R DS(on) Q G). With a maximum drain-source voltage (V DS) of 80 V and a continuous drain current (I D) of 100 A at 100°C, it is robust enough for demanding environments. Its most striking feature is its ultra-low typical on-resistance (R DS(on)) of just 1.55 mΩ at 10 V. This minimal resistance is the key to reducing conduction losses, which directly translates into higher system efficiency and less wasted energy in the form of heat.

Beyond its stellar static performance, the device excels in dynamic operation. The OptiMOS 5 technology ensures superior switching performance, significantly lowering both switching losses and electromagnetic interference (EMI). This allows designers to increase the switching frequency of their power supplies, which in turn enables the use of smaller passive components like inductors and capacitors. The result is a substantial increase in overall power density, allowing for more compact and lighter end products without sacrificing output power or performance.

The IPP055N08NF2S is offered in an PQFN 8x8 mm package (TOLL - Transistor Outline Leadless), which is a surface-mount package designed for automated assembly. This package offers an excellent thermal footprint and very low parasitic inductance, further enhancing switching performance and thermal management. The combination of low electrical losses and effective thermal characteristics simplifies cooling requirements, potentially reducing the need for large heat sinks or complex cooling systems, thereby lowering the total system cost.

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In summary, the Infineon IPP055N08NF2S is a top-tier power MOSFET that delivers an optimal blend of ultra-low on-resistance, fast switching speed, and excellent thermal performance. It is an ideal solution for engineers aiming to push the boundaries of efficiency and power density in their next-generation DC-DC converters, motor control units, and other power conversion systems.

Keywords:

1. OptiMOS™ 5

2. Power MOSFET

3. Low RDS(on)

4. Efficient Power Conversion

5. High Power Density