Infineon IPP072N10N3GXKSA1: A 100V OptiMOS 5 Power MOSFET for High-Efficiency Power Conversion
The relentless pursuit of higher efficiency and power density in modern electronic systems places immense demands on power semiconductor technology. At the forefront of this innovation is Infineon's OptiMOS™ 5 power MOSFET family, with the IPP072N10N3GXKSA1 standing out as a premier solution for a wide range of demanding applications. This 100V N-channel MOSFET is engineered to set new benchmarks in performance, enabling designers to create more compact, cooler-running, and highly efficient power conversion systems.
A key metric for any power switch is its on-state resistance, RDS(on). The IPP072N10N3GXSA1 boasts an exceptionally low maximum RDS(on) of just 7.2 mΩ at 10 V. This ultra-low resistance is the primary contributor to minimizing conduction losses. When a MOSFET is fully turned on, the power it dissipates is proportional to the square of the current and its RDS(on). By drastically reducing this value, the device operates cooler, leading to improved system reliability and reduced thermal management requirements. This allows for either higher continuous current handling or the use of smaller heat sinks, directly contributing to higher power density.
Beyond static losses, switching performance is critical, especially in high-frequency switch-mode power supplies (SMPS). The OptiMOS™ 5 technology features superior switching characteristics and a reduced gate charge (Qg). A lower Qg means the gate driver can turn the device on and off more quickly and with less energy expended in the process. This results in significantly lower switching losses, which dominate at higher operating frequencies. The combination of low RDS(on) and low Qg makes the IPP072N10N3GXKSA1 exceptionally versatile, performing excellently in both hard-switching and soft-switching topologies like LLC resonant converters.
The benefits extend into the device's packaging and ruggedness. Housed in the space-saving, thermally enhanced D²PAK (TO-263) package, it offers an excellent power-to-footprint ratio. This package is designed for efficient heat dissipation, transferring losses from the silicon die directly to the PCB. Furthermore, the MOSFET is characterized by a high avalanche ruggedness and an integrated Schottky diode in the source-drain body diode. This integration improves reverse recovery performance, further enhancing efficiency and system reliability in circuits where the body diode conducts, such as in synchronous rectification or bridge configurations.
Typical applications for this powerful MOSFET are extensive. It is an ideal choice for:
Synchronous Rectification in server and telecom SMPS.
DC-DC Converters and Voltage Regulation Modules (VRM) for computing.
Motor Drive and Control circuits in industrial automation.
Solar Inverters and other renewable energy systems.
High-current battery management and protection circuits.
ICGOODFIND: The Infineon IPP072N10N3GXKSA1 exemplifies the pinnacle of power MOSFET technology, delivering a winning combination of ultra-low RDS(on), minimal switching losses, and excellent thermal performance in a robust package. It is a critical enabler for engineers designing the next generation of high-efficiency, high-power-density conversion systems across industrial, computing, and automotive domains.
Keywords: OptiMOS 5, Low RDS(on), High-Efficiency, Power Conversion, Synchronous Rectification.
